Low temperature crystallization of amorphous silicon using an excimer laser
- 1 March 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (3) , 241-248
- https://doi.org/10.1007/bf02733813
Abstract
No abstract availableKeywords
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- Laser-recrystallized silicon thin-film transistors on expansion-matched 800°C glassIEEE Electron Device Letters, 1987
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- Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layersJournal of Applied Physics, 1985