UV Pulsed Laser Annealing of Si+ Implanted Silicon Film and Low-Temperature Super-Thin Film Transistors
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L309-311
- https://doi.org/10.1143/jjap.28.l309
Abstract
A UV pulsed excimer laser was irradiated onto Si+-implantated thin silicon films. The resultant crystallized state was investigated by UV reflectance measurement and TEM observation. As a result, we found that the grain size depended on the irradiated pulse energy, and that the grain growth was more effective for a smaller Si+ dose, in the low-pulse-energy region of less than 200 mJ/cm2. Moreover, for efficient annealing, the back-side irradiation through the quartz substrate was preferable to the front-side irradiation upon the silicon surface. Using this method, TFT's were fabricated in a low-temperature process, and excellent device characteristics were obtained. The leakage current was below 1×10-13 (A/µm).Keywords
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