Base doping and dopant profile control of SiGe npn and pnp HBTs
- 1 July 2008
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 254 (19) , 6013-6016
- https://doi.org/10.1016/j.apsusc.2008.02.124
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor DepositionJapanese Journal of Applied Physics, 2006
- P doping control during SiGe:C epitaxyThin Solid Films, 2006
- Atomic layer processing for doping of SiGeThin Solid Films, 2005
- Tailoring dopant diffusion for advanced SiGe:C heterojunction bipolar transistorsSolid-State Electronics, 2000
- Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. 73, 1682 (1998)]Applied Physics Letters, 1999
- Suppressed diffusion of boron and carbon in carbon-rich siliconApplied Physics Letters, 1998
- A high-speed complementary silicon bipolar technology with 12-fJ power-delay productIEEE Electron Device Letters, 1993