Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition
- 23 March 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (13)
- https://doi.org/10.1063/1.1894613
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structureJournal of Applied Physics, 2003
- Strain engineering of self-organized InAs quantum dotsPhysical Review B, 2001
- Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor depositionApplied Physics Letters, 2001
- Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressorsPhysical Review B, 2000
- Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructuresApplied Physics Letters, 2000
- Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor depositionApplied Physics Letters, 1999
- Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substratesApplied Physics Letters, 1999
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μmApplied Physics Letters, 1999
- A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substratesApplied Physics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998