High-differential mobility of hot electrons in delta-doped quantum wells
- 5 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 694-696
- https://doi.org/10.1063/1.105368
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Ionized-impurity scattering of quasi-two-dimensional quantum-confined carriersPhysical Review Letters, 1991
- Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transportIEEE Transactions on Electron Devices, 1991
- Charged-impurity scattering in GaInAs FETsSolid-State Electronics, 1991
- Incorporation of Si in δ-doped GaAs studied by local vibrational mode spectroscopyApplied Physics Letters, 1989
- Electron velocity in GaAs: bulk and selectively doped heterostructuresSemiconductor Science and Technology, 1989
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- Diffusion of atomic silicon in gallium arsenideApplied Physics Letters, 1988
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Ionized-impurity scattering in the strong-screening limitPhysical Review B, 1987
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980