Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition
- 1 December 1996
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 36 (7) , 527-532
- https://doi.org/10.1209/epl/i1996-00264-2
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The Anderson-Mott transitionReviews of Modern Physics, 1994
- Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductorsPhysical Review Letters, 1993
- Quantitative evaluation of electron-electron-interaction effects in the magnetoconductivity of heavily doped metallic Si:PPhysical Review B, 1991
- Effect of a magnetic field on the critical conductivity exponent at the metal-insulator transitionPhysical Review Letters, 1991
- Critical conductivity exponent for Si:BPhysical Review Letters, 1991
- Electronic inelastic lifetime near a mobility edgePhysical Review B, 1987
- Disordered electronic systemsReviews of Modern Physics, 1985
- Metal-insulator transition in a doped semiconductorPhysical Review B, 1983
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980
- On the dynamics of electrons in an impure metalThe European Physical Journal A, 1974