Quantitative evaluation of electron-electron-interaction effects in the magnetoconductivity of heavily doped metallic Si:P

The low-temperature correction δσ=m √T (m${\mathit{k}}_{\mathit{B}}$T is applied: σ decreases, and the slope ${\mathit{m}}_{\mathit{B}}$ of δσ vs √T becomes positive. The magnetoconductivity for T=const varies as δσ=${\mathit{m}}_{\mathit{R}}$ √B with ${\mathit{m}}_{\mathit{R}}$<0. The three experimental values m, ${\mathit{m}}_{\mathit{B}}$, and ${\mathit{m}}_{\mathit{R}}$ yield consistent values of the electron-electron-interaction parameter F${\mathrm{̃}}_{\mathrm{\sigma }}$ when many-valley and anisotropy effects are taken into account, under the assumption that the valley degeneracy is lifted by the magnetic field. F${\mathrm{̃}}_{\mathrm{\sigma }}$ is found to increase slightly from 1.17 to 1.40 in a magnetic field.