Comparative behavior and performances of MESFET and HEMT as a function of temperature

This publication has 12 references indexed in Scilit:

• 2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1990
• Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
  IEEE Transactions on Microwave Theory and Techniques, 1989
• Noise modeling and measurement techniques (HEMTs)
  IEEE Transactions on Microwave Theory and Techniques, 1988
• Shallow and deep donors in direct-gap $n$-type ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}:\mathrm{S}\mathrm{i}$ grown by molecular-beam epitaxy
  Physical Review B, 1984
• Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
  IEEE Transactions on Electron Devices, 1982
• Electron mobility inGa1−xAlxAsalloys
  Physical Review B, 1981
• Electron transport and band structure ofGa1−xAlxAsalloys
  Physical Review B, 1980
• Analysis of Polar Optical Scattering of Electrons in GaAs
  Journal of Applied Physics, 1970
• Mobility of Electrons in Compensated Semiconductors. II. Theory
  Physical Review B, 1967
• Gate noise in field effect transistors at moderately high frequencies
  Proceedings of the IEEE, 1963