Geometrical magnetoresistance and hall mobility in gunn effect devices
- 1 February 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (2) , 181-189
- https://doi.org/10.1016/0038-1101(70)90049-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A Three-Point Probe Method for Electrical Characterization of Epitaxial FilmsJournal of the Electrochemical Society, 1964
- Influence of Conductivity Gradients on Galvanomagnetic Effects in SemiconductorsJournal of Applied Physics, 1961
- Influence of Magnetoconductivity Discontinuities on Galvanomagnetic Effects in Indium AntimonideJournal of Applied Physics, 1961
- Effect of Random Inhomogeneities on Electrical and Galvanomagnetic MeasurementsJournal of Applied Physics, 1960
- Der Geometrieeinfluß auf den Hall-Effekt bei rechteckigen HalbleiterplattenZeitschrift für Naturforschung A, 1958
- Evaluation of Transport Integrals for Mixed Scattering and Application to Galvanomagnetic EffectPhysical Review B, 1957
- Zur transversalen magnetischen Widerstandsänderung von InSbThe European Physical Journal A, 1954