Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and $\text{579\hspace{0.5em}}{\mathrm{cm}}^{\text{−1}},$ which are attributed to the $A_1(\mathrm{transverse\hspace{0.17em}optical}\mathrm{),}$ $E_2,$ and $A_1(\mathrm{longitudinal\hspace{0.17em}optical})$ phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV.