Charge transfer in buried-channel charge-coupled devices
- 1 January 1974
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XVII, 146-147
- https://doi.org/10.1109/isscc.1974.1155317
Abstract
A detailed numerical simulation of the charge-transfer process in buried-channel CCDs will be presented. The limitations on the device performance due to incomplete free charge transfer, device parameters and clocking waveforms will be discussed.Keywords
This publication has 17 references indexed in Scilit:
- Final stage of the charge-transfer process in charge-coupled devicesIEEE Transactions on Electron Devices, 1974
- Charge transfer in buried-channel charge-coupled devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974
- Overlapping-gate buried-channel charge-coupled devicesElectronics Letters, 1973
- Charge Distribution in Buried-Channel Charge-Coupled DevicesBell System Technical Journal, 1973
- Charge transfer in overlapping gate charge-coupled devicesIEEE Journal of Solid-State Circuits, 1973
- The Potential in a Charge Coupled Device With No Mobile Minority Carriers And Zero Plate SeparationBell System Technical Journal, 1973
- The Buried Channel Charge Coupled DeviceBell System Technical Journal, 1972
- Incomplete charge transfer in IGFET bucket-brigade shift registersIEEE Transactions on Electron Devices, 1971
- A NEW DIFFERENCE SCHEME FOR PARABOLIC PROBLEMS**This work was supported by the U. S. Army Research Office, Durham, under Contract DAHC 04-68-C-0006.Published by Elsevier ,1971
- SURFACE CHARGE TRANSPORT IN SILICONApplied Physics Letters, 1970