The Potential in a Charge Coupled Device With No Mobile Minority Carriers And Zero Plate Separation
- 6 May 1973
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 52 (5) , 669-696
- https://doi.org/10.1002/j.1538-7305.1973.tb01984.x
Abstract
A two-dimensional analysis of the potential in charge coupled devices is presented. It is assumed that there are no mobile minority carriers, that the plate separation is zero, and that the plate voltage does not vary with time. The depletion layer a...This publication has 9 references indexed in Scilit:
- The quantitative effects of interface states on the performance of charge-coupled devicesIEEE Transactions on Electron Devices, 1973
- Two-Phase Stepped Oxide CCD Shift Register Using Undercut IsolationApplied Physics Letters, 1972
- Implanted-Barrier Two-Phase Charge-Coupled DeviceApplied Physics Letters, 1971
- Charge-coupled devices - A new approach to MIS device structuresIEEE Spectrum, 1971
- SURFACE CHARGE TRANSPORT IN SILICONApplied Physics Letters, 1970
- Field of Negative Point, Line or Plane Charges in an n-Type SemiconductorJournal of Applied Physics, 1970
- Nonlinear Difference Equations and Gauss-Seidel Type Iterative MethodsSIAM Journal on Numerical Analysis, 1966
- Numerical Methods for Scientists and Engineers.Journal of the Royal Statistical Society. Series A (General), 1962
- On mildly nonlinear partial difference equations of elliptic typeJournal of Research of the National Bureau of Standards, 1953