Band lineup at an organic-inorganic semiconductor heterointerface: perylenetetracarboxylic dianhydride/GaAs(100)
- 20 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3482-3484
- https://doi.org/10.1063/1.111247
Abstract
We present a photoemission study of the electronic properties of an interface between the organic semiconductor; 3, 4, 9,10 perylenetetracarboxylic dianhydride (PTCDA) and n‐type GaAs(100). We examine the evolution of the interface electron distribution as a function of PTCDA overlayer thickness. The highest occupied molecular orbital level of PTCDA is measured at 0.7±0.1 eV below the GaAs valence band maximum. The PTCDA ionization potential is measured at 6.4±0.15 eV. The discrepancy between the band alignment deduced from photoemission and transport measurement suggests that interface states or polarization effects play a role in determining the transport properties of the organic‐inorganic heterojunction diodes.Keywords
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