Properties of ambient-enhanced photoluminescence from InP and GaAs surfaces
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5446-5448
- https://doi.org/10.1063/1.326595
Abstract
Photoluminescent properties due to ambient gas are investigated. Photoluminescence (PL) as a function of gas pressure indicates a molecular adsorption. Curious gas‐flow effect on PL intensity from InP and GaAs surface is observed. Gas‐feeding condition on the sample crystal surface affects the PL intensity in all of the examined gases (N2, Ar, H2, and O2). Various factors which are assumed to be the cause of this phenomenon were discussed, and the molecular adsorption is found to be the possible mechanism.This publication has 1 reference indexed in Scilit:
- Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfacesApplied Physics Letters, 1978