Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfaces
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 312-314
- https://doi.org/10.1063/1.90351
Abstract
The reversible change in photoluminescence intensity with change in gaseous ambients (N2, Ar, H2, O2, H2O, and vacuum) from a InP cleaved (110) surface and the irreversible change in photoluminescence from a GaAs cleaved (110) surface when exposed to oxygen were observed at room temperature. These phenomena imply that adsorbed N2, H2, Ar, H2O, and O2 gases can be exchanged reversibly on the InP surface, and the surface recombination velocity changes reversibly with the adsorbed gas species. On the other hand, oxidation proceeds rapidly and irreversibly on GaAs cleaved surfaces.Keywords
This publication has 2 references indexed in Scilit:
- Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfacesApplied Physics Letters, 1977
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977