Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
- 25 November 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (23) , 4395-4397
- https://doi.org/10.1063/1.1526161
Abstract
We present the concept and experimental realization of polarization-induced bulk electron doping in III–V nitride semiconductors. By exploiting the large polarization charges in the III–V nitrides, we are able to create wide slabs of high-density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization-doped electron distributions than comparable shallow donor-doped structures, especially at low temperatures due to the removal of ionized impurity scattering. Such polarization-induced three-dimensional electron slabs can be utilized in a variety of device structures owing to their high conductivity and continuously changing energy gap.Keywords
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This publication has 13 references indexed in Scilit:
- Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffractionJournal of Physics D: Applied Physics, 2002
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistorsApplied Physics Letters, 2000
- Dislocation scattering in a two-dimensional electron gasApplied Physics Letters, 2000
- Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTsSolid-State Electronics, 2000
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- Activation energies of Si donors in GaNApplied Physics Letters, 1996
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989
- Realization of a quasi-three-dimensional modulation-doped semiconductor structureApplied Physics Letters, 1988
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980