Realization of a quasi-three-dimensional modulation-doped semiconductor structure
- 29 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 791-793
- https://doi.org/10.1063/1.99834
Abstract
We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped AlxGa1−xAs well bounded by undoped (spacer) and doped layers of AlyGa1−yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1−xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≂2.5×1011 cm−2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.Keywords
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