Charge Instability in MIS Structures on Silicon with PECVD Boron Nitride Thin Films
- 16 October 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 133 (2) , K57-K60
- https://doi.org/10.1002/pssa.2211330244
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor depositionThin Solid Films, 1991
- Properties of low-temperature (80-300° C) pyrolytic SiO2 on Si and InPJournal of Electronic Materials, 1988
- Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1987
- Ion beam synthesis of cubic boron nitrideJournal of Vacuum Science & Technology A, 1983