Heterogeneous kinetics and mass transport in chemical vapour deposition processes: Part I theoretical discussion
- 31 December 1981
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 4 (3) , 249-281
- https://doi.org/10.1016/0146-3535(81)90005-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- A consideration of the effect of the thermal boundary layer on CVD growth ratesJournal of Crystal Growth, 1980
- Polysilicon growth kinetics in a low pressure chemical vapour deposition reactorThin Solid Films, 1979
- The modified entrainment method and its application to the study of heterogeneous reactionsJournal of Crystal Growth, 1979
- Equilibrium and kinetics in the chemical vapour deposition of siliconJournal of Crystal Growth, 1975
- Chemical Vapor Deposition of Transparent, Electrically Conductive Tin Oxide Films Formed from Dibutyl Tin DiacetateJournal of the Electrochemical Society, 1975
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- Chromium Coatings Prepared by Chemical Vapor DepositionJournal of the Electrochemical Society, 1969
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967
- Kinetics of the heterogeneous decomposition of nickel tetracarbonylAIChE Journal, 1967