Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties
- 10 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (10) , 1278-1280
- https://doi.org/10.1063/1.118526
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxySemiconductor Science and Technology, 1995
- Extremely high electron mobility in Si/SiGe modulation-doped heterostructuresApplied Physics Letters, 1995
- Influence of misfit dislocations on the surface morphology of Si1−xGex filmsApplied Physics Letters, 1995
- Azimuthal variation of the step distribution on vicinal Si(001) surfacesSurface Science, 1994
- Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientationApplied Physics Letters, 1993
- Surface morphology of related GexSi1−x filmsApplied Physics Letters, 1992
- Low-field transport coefficients in GaAs/As heterostructuresPhysical Review B, 1989
- Far-infrared emission from Si-MOSFET’s on high-index surfacesApplied Physics Letters, 1978
- Valley-Valley Splitting in Inversion Layers on a High-Index Surface of SiliconPhysical Review Letters, 1978
- Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron GasPhysical Review Letters, 1977