Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation
- 11 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (15) , 2094-2096
- https://doi.org/10.1063/1.110603
Abstract
High quality Si (strained)/Si0.7Ge0.3 (relaxed) modulation‐doped structures incorporating unusually thin (700 nm) buffer layers were grown with molecular beam epitaxy at 700 °C. By utilizing (100) substrates misoriented toward (011) by 4°, the density of threading dislocations was reduced by over an order of magnitude as compared with conventional techniques. These layers produced exceptionally high Hall mobilities of 1790 cm2/V s at 300 K and 19 000 cm2/V s at 77 K on n‐type modulation‐doped heterostructures. The effect of substrate misorientation on threading dislocation density was investigated using transmission electron microscopy and Nomarski microscopy.Keywords
This publication has 11 references indexed in Scilit:
- Observation of the fractional quantum Hall effect in Si/SiGe heterostructuresApplied Physics Letters, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditionsJournal of Crystal Growth, 1991
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- Gallium arsenide and other compound semiconductors on siliconJournal of Applied Physics, 1990
- The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy qualityJournal of Applied Physics, 1988
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985