Laser Enhanced Selective Epitaxy of ιii-V Compounds
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Laser direct writing of single-crystal III-V compounds on GaAsApplied Physics Letters, 1986
- Laser selective deposition of III–V compounds on GaAs and Si substratesJournal of Crystal Growth, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Laser selective deposition of GaAs on SiApplied Physics Letters, 1986
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- A new structure for high-powered injection lasersJournal of Applied Physics, 1981