DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS
- 1 April 1991
- journal article
- Published by Emerald Publishing in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
- Vol. 10 (4) , 573-588
- https://doi.org/10.1108/eb051732
Abstract
Challenges to a robust and accurate implementation of electric‐field‐enhanccd thermal‐generation mechanisms in a drift‐diffusion‐based semiconductor‐device simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trench‐DRAM cells.Keywords
This publication has 19 references indexed in Scilit:
- Unified generation model with donor and acceptor-type trap states for heavily doped siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A reliable profiled lightly doped drain (PLD) cell for high-density submicrometer EPROM's and flash EEPROM'sIEEE Transactions on Electron Devices, 1990
- Injection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistorsIEEE Transactions on Electron Devices, 1989
- The effects of gate field on the leakage characteristics of heavily doped junctionsIEEE Transactions on Electron Devices, 1989
- Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Leakage mechanisms in the trench transistor DRAM cellIEEE Transactions on Electron Devices, 1988
- Band-to-band tunneling and thermal generation gate-induced drain leakageIEEE Transactions on Electron Devices, 1988
- The impact of gate-induced drain leakage current on MOSFET scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Field-enhanced emission and capture in polysilicon pn junctionsSolid-State Electronics, 1985
- Theory of TunnelingJournal of Applied Physics, 1961