Electrical properties of amorphous Ni-P alloys produced by ion implantation

The resistivity temperature dependence of room-temperature-implanted ${\mathrm{Ni}}_{1-x}{\mathrm{P}}_x$ alloys was measured at P concentrations between $x=0.14\mathrm{}$ and $x=0.27\mathrm{}$, and compared to that of evaporated and electrodeposited alloys. The results are discussed in the light of previously reported channeling experiments on the same alloys. It is found that the implanted amorphous ${\mathrm{Ni}}_{1-x}{\mathrm{P}}_x$ systems are identical to their counterparts prepared by conventional techniques.