In SituChanneling Study of Ni-P Amorphous Phase Formation

The nature and dose dependence of the disorder produced by 125-keV P implantation in Ni single crystals was studied via in situ channeling experiments using the 380-keV ${}_{}{}^4{}_{}{}^{}\mathrm{He}$ beam of the implanter. At 90 K, disordering (and presumably amorphization) occurs around the depth of the maximum in the implanted P concentrations; at 300 K, it occurs mainly at the surface and progresses inwards until the P projected range and peak in deposited energy profile are reached. In both cases, the lattice is randomized at a local P concentration of ∼0.20.