The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes
- 1 January 1983
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 44 (8) , 993-1003
- https://doi.org/10.1051/jphys:01983004408099300
Abstract
When the free surface of an amorphous silicon thin film is exposed to water vapour, the contact potential and planar conductance simultaneously change. For three samples, we correlate the two measurements and interpret them in terms of adsorbate induced changes of the surface potential, similar to field effect experimental analysis. During temperature cycles, there is a strong correlation between non-linear portions of the log conductance versus 1/T plots and the variation of the contact potentialKeywords
This publication has 5 references indexed in Scilit:
- Determination of the density of gap states: field effect and surface adsorptionSolar Cells, 1980
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- The adsorption of carbon monoxide, ammonia, and wet air on goldSurface Science, 1975