Lattice defects and surface properties of clean germanium
- 1 February 1967
- journal article
- Published by Elsevier in Surface Science
- Vol. 6 (2) , 261-278
- https://doi.org/10.1016/0039-6028(67)90008-8
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Low-Pressure Sputtered Germanium FilmsJournal of Vacuum Science and Technology, 1965
- Source Contamination Effects on the Epitaxy of Ge Films on GeJournal of Vacuum Science and Technology, 1965
- Analysis of Thin-Film Germanium Epitaxially Deposited onto Calcium FluorideJournal of Applied Physics, 1963
- Formation Conditions and Structure of Thin Epitaxial Germanium Films on Single-Crystal SubstratesJournal of Applied Physics, 1962
- Textural Properties of Germanium FilmsJournal of Applied Physics, 1961
- Properties of Thin Antimony Films Deposited in High VacuumJournal of Applied Physics, 1961
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959
- Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron DiffractionJournal of Applied Physics, 1958
- Work-Function Studies of Germanium Crystals Cleaned by Ion BombardmentJournal of Applied Physics, 1957
- The Contamination in Evaporated Films by the Material of the SourceProceedings of the Physical Society. Section B, 1952