Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition
- 30 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 340-345
- https://doi.org/10.1016/s0022-0248(98)00674-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor depositionApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumpingApplied Physics Letters, 1996
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- Analysis of MOCVD of GaAs on patterned substratesJournal of Crystal Growth, 1991
- Selective Epitaxial Deposition of SiliconNature, 1962