Dislocations in Gallium Arsenide Grown from Gallium by a Travelling Solvent Method
- 1 June 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7) , 2913-2914
- https://doi.org/10.1063/1.1782153
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Growth of GaP Crystals and p-n Junctions by a Traveling Solvent MethodJournal of Applied Physics, 1964
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959