Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates
- 1 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (1-2) , 25-30
- https://doi.org/10.1016/0022-0248(94)00828-0
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- The growth of InAs1-xSbx/InAs strained-layer superlattices by metalorganic chemical vapot depositionJournal of Crystal Growth, 1994
- Reproducible growth of InAsxSb1−x/InSb strained-layer superlattice photodiodes by low pressure MOCVDJournal of Crystal Growth, 1992
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVDJournal of Crystal Growth, 1986
- The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1986
- Summary Abstract: Molecular beam epitaxial growth of InAsSb alloys and superlatticesJournal of Vacuum Science & Technology B, 1986
- Growth of InAs1−xSbx (0<x<1) and InSb-InAsSb superlattices by molecular beam epitaxyApplied Physics Letters, 1985
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Advantages of the HgTe-CdTe superlattice as an infrared detector materialApplied Physics Letters, 1983
- Organometallic VPE Growth of InAs1-xSbxon InAsJapanese Journal of Applied Physics, 1980