Doping centres in partially annealed carbon implanted silicon

1 January 1975

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 26 (1-2) , 17-21
https://doi.org/10.1080/00337577508237414

Abstract

Carbon ions have been implanted into p-type silicon at energies in the range 1.5–4.3 MeV in order to examine the doping effects of the damage. Carbon was chosen since it does not produce impurity doping and hence damage effects alone could be observed. Capacitance-voltage doping profiles showed that initially two p-type doping peaks were produced. On annealing to 400°C the p-type activity increased, then disappeared completely after a 700°C anneal. The deeper peak disappeared at a lower annealing temperature. These observations have been used to interpret anomalous results that have been observed in incompletely annealed ion implanted MOST's, where it had been suspected that the overall doping effect was produced by a combination of impurity and damage doping centres.

Keywords

This publication has 5 references indexed in Scilit:

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