Improving Signal-to-Noise Limits in High Resolution Transmission Electron Microscopy
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Signal-to-noise ratios for Si lattice images are measured for a variety of different specimen preparation techniques, including ion-milling, chemical polishing, cleavage and in-situ surface cleaning by heating. The noise levels are significantly lower in the latter, possibly permitting new classes of experiments in image quantitation and impurity imaging.Keywords
This publication has 4 references indexed in Scilit:
- Small-defect clusters in chromia-doped rutilesJournal of Solid State Chemistry, 1985
- Observations of point defects in silicon by means of dark-field lattice plane imagingPhysica Status Solidi (a), 1982
- Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron MicroscopyMRS Proceedings, 1980
- On the possibility of the direct imaging of point defects in crystals using transmission electron microscopyPhilosophical Magazine, 1977