Determination of transport parameters for InP device simulations in n+n+ structures
- 31 December 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (12) , 1317-1322
- https://doi.org/10.1016/0038-1101(87)90058-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Efficient transferred electron device simulation method for microwave and millimeter wave cad applicationsSolid-State Electronics, 1987
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- High-field transport in indium phosphideJournal of Physics C: Solid State Physics, 1976