Efficient transferred electron device simulation method for microwave and millimeter wave cad applications
- 31 October 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (10) , 1025-1036
- https://doi.org/10.1016/0038-1101(87)90094-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Negative resistance and distributed gain in submicron semiconductor diodes using analytical solutions of the Boltzmann transport equationInternational Journal of Electronics, 1987
- On the existence of submillimeter-wave negative conductance in n-gallium arsenide diodesJournal of Applied Physics, 1987
- Analytical method for selecting random scattering angle for polar or acoustic phonon scattering of central valley conduction band electrons in GaAsIEE Proceedings I Solid State and Electron Devices, 1987
- Hot, tepid and temperate electrons in bulk GaAsIEE Proceedings I Solid State and Electron Devices, 1986
- Theoretical contribution to the design of millimeter-wave TEO'sIEEE Transactions on Electron Devices, 1983
- Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximationsJournal of Applied Physics, 1981
- On the stability of finite difference schemes in transient semiconductor problemsComputer Methods in Applied Mechanics and Engineering, 1973
- Large-scale numerical simulation in semiconductor device modellingComputer Methods in Applied Mechanics and Engineering, 1972
- Switching Behavior of Over-Critically Doped Gunn DiodesApplied Physics Letters, 1972
- Stability and switching in overcritically doped Gunn diodesProceedings of the IEEE, 1971