On the existence of submillimeter-wave negative conductance in n-gallium arsenide diodes

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Abstract
Earlier analyses which have predicted submillimeter‐wave negative conductance in short GaAs n+nn+ structures are reviewed, and found to be deficient with respect to transport model and boundary conditions employed. The critical sensitivity of the results to boundary conditions is demonstrated analytically. Large‐signal results for a specific GaAs n+nn+ structure are then presented. These results, obtained using a self‐consistent particle‐field Monte Carlo simulation, suggest that the structure may display negative conductance at very low temperatures, but that a room‐temperature lattice condition precludes such negative conductance.