New Negative Conductance in GaAs n+-n-n+ Ballistic Diode –Time-Dependent Computer Simulation–
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12R)
- https://doi.org/10.1143/jjap.22.1889
Abstract
Time-dependent computer simulations were performed to investigate the high-frequency effects of a GaAs n+-n-n+ ballistic diode. A new negative conductance, found previously using a simplified diode model, was confirmed by the numerical simulation, though the results differed considerably from those obtained previously. It is demonstrated that a GaAs n+-n-n+ ballistic diode exhibits negative conductance over a wide frequency range over 1000 GHz. The diode can be expected to act as a new solid-state source in the far-infared frequency range.Keywords
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