Numerical study of an n-gallium arsenide diode distributed oscillator

15 August 1984

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 56 (4) , 1086-1092
https://doi.org/10.1063/1.334078

Abstract

The dynamic electron velocity, electron temperature, etc., in an n‐gallium arsenide ballistic diode have been calculated by solving the Boltzmann equation under a hydrodynamic approximation. It has been found from the results that an n‐gallium arsenide ballistic diode exhibits a negative conductance at a fairly high frequency range and over a wide frequency range from 1500.0 to 2300.0 GHz. From the small signal analysis using a simplified diode model, it has been shown that the negative conductance arises as a result of density modulation effects of the carriers, namely, space‐charge transit time effects. High growth rate, up to 300.0 Np/cm, has been predicted in an n‐gallium arsenide ballistic diode distributed oscillator. The diode can be expected to act as a new solid‐state source at a far infrared frequency range.

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