Switching Behavior of Over-Critically Doped Gunn Diodes
- 15 January 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (2) , 60-62
- https://doi.org/10.1063/1.1654045
Abstract
A study is made of Gunn‐diode behavior for various lengths and doping densities. Emphasis is placed mainly on very short over‐critically doped diodes. Such diodes, when biased above threshold, are stable with a high‐field anode layer. The transition to this stable state occurs with or without the intermediary formation of Gunn domains. The relations between the various types of diode behavior and the nature of the small‐signal instability, convective or absolute, in the material is examined.Keywords
This publication has 3 references indexed in Scilit:
- Convective and Absolute Instabilities in Semiconductors Exhibiting Negative Differential MobilityPhysical Review Letters, 1971
- Comment on ‘Pulse-rate exponential function generator’Electronics Letters, 1971
- Stability and switching in overcritically doped Gunn diodesProceedings of the IEEE, 1971