GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7A) , L850-852
- https://doi.org/10.1143/jjap.31.l850
Abstract
We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique. An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm. This is approximately 1.6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.Keywords
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