New Analysis of Direct Exciton Transitions: Application to GaP
- 8 February 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 26 (6) , 311-314
- https://doi.org/10.1103/physrevlett.26.311
Abstract
A new analysis of direct exciton data is presented and applied to the , transitions in GaP. A curve-fitting procedure is used to compare both the discrete and continuum structure in the data with theoretical curves. Good agreement is obtained for the binding energies, broadening, strengths, and shapes. It is shown that the binding energy of is 11 ± 1 meV rather than the 5-6-meV value previously obtained from the conventional analysis.
Keywords
This publication has 10 references indexed in Scilit:
- Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in SemiconductorsPhysical Review Letters, 1970
- Direct Exciton Spectrum in Diamond and Zinc-Blende SemiconductorsPhysical Review Letters, 1970
- Lattice Mobility of Holes in III-V CompoundsPhysical Review B, 1970
- Exchange Interaction between Excitons in the Quasi‐Cubic ModelPhysica Status Solidi (b), 1970
- Dielectric Constant of GaP at 1.6°KPhysical Review B, 1969
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eVJournal of Applied Physics, 1967
- The Absorption Spectrum of Gallium Phosphide between 2 and 3 eVPhysica Status Solidi (b), 1966
- Electron-Hole Exchange Energy in Shallow ExcitonsJournal of the Physics Society Japan, 1964
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957