Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P+-Implanted Si Studied Using Monoenergetic Positron Beams

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Abstract
Effects of oxygen atoms recoiled from SiO2 films on depth profiles of defects and annealing processes in P+-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P+-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700° C. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO2/Si interface, and such defects were dissociated by annealing at 1000° C.