Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams

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Abstract
Defects in separation-by-implanted-oxygen wafers were studied with monoenergetic positron beams. Doppler broadening profiles of the positron annihilation radiation and lifetimes of positrons were measured as a function of incident positron energy for 200-keV O+-ion implanted Si specimens. For as-implanted specimens, the dominant defect species at a depth of ∼20 nm was identified as vacancy-clusters and that in the region between ∼200 nm and ∼600 nm as vacancy-oxygen complexes. After annealing treatment, the formation of an oxide layer was observed in the region where a great number of vacancy-oxygen complexes formed. It was also found that interstitial Si atoms accumulated at the Si/SiO2 interface.