Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Proved with Slow Positrons

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Abstract
Variable-energy positron-beam studies have been made on 150-keV As+-implanted SiO2(43 nm)/Si specimens. From measurements of Doppler braodening profiles of the positron annihilation as a function of incident positron energy, it was found that the region of vacancy-type defects induced by As+-implantation extends far beyond the As-stopping profile. The dominant defect species was identified as a divacancy from the characteristic value of the line-shape parameter. The defect concentration of the damaged region for the specimens with the doses of 5×1014∼5×1015 As/cm2 was estimated as 1×1021 cm-3. The effect of isochronal annealing is also discussed.