Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1R)
- https://doi.org/10.1143/jjap.30.112
Abstract
We investigate the influence of oxygen concentration and annealing sequence on the microstructure of the SIMOX (separation by implanted oxygen) wafer. Samples with different oxygen contents are compared. Higher oxygen concentration causes higher density of dislocations in the top silicon layer by the growth and dissolution of precipitates. The two-step annealing, consisting of annealing at 600°C for 8 h and 1350°C for 30 min, increases the density of dislocations because the nuclei of precipitates may effectively be formed before the high-temperature annealing. Another procedure consisting of laser annealing and 1350°C annealing causes no significant effect on the dislocation density.Keywords
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