Reduction of floating substrate effect in thin-film SOI MOSFETs
- 13 February 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (4) , 187-188
- https://doi.org/10.1049/el:19860130
Abstract
The presence of a floating substrate in SOI transistors gives rise to a decrease of threshold voltage when drain voltage is increased. When the devices are made in a very thin silicon film, the latter is completely depleted when the device is in the 'on' state, and no part of the film can act as a floating substrate. This brings about a dramatic decrease of the so-called 'kink effect'.Keywords
This publication has 1 reference indexed in Scilit:
- SOS MOSFET’sPublished by Springer Nature ,1977