Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- 1 August 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (8R) , 1597-1603
- https://doi.org/10.1143/jjap.30.1597
Abstract
Vacancy-type defects in 2-MeV B+-, 2-MeV P+- and 3-MeV As+-ion implanted Si(100) were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species were identified as vacancy-clusters from their characteristic values of the lineshape parameter S. From isochronal annealing experiments for the P+-implanted specimen, two types of oxygen-vacancy complexes were found to coexist even after 1200°C annealing.Keywords
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