Effective Masses of Electrons in Indium Arsenide and Indium Antimonide

Measurements of the electrical conductivity and Hall effect of $n$-type indium arsenide and indium antimonide specimens have been made between 1.5°K and 300°K. The dilute metallic character of these substances at low temperatures permits the Fermi level at absolute zero to be obtained from the electrical conductivity versus temperature data. From each Fermi level and the respective conduction electron concentration determined from the Hall effect, we obtained the following effective electron masses: InAs, $\frac{m^{*}}{m_0}=0.020\mathrm{}\pm 0.005$; and InSb, $\frac{m^{*}}{m_0}=0.016\mathrm{}\pm 0.007$.