Pressure dependence of the deep level associated with oxygen in n-GaAs
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (11) , 764-766
- https://doi.org/10.1063/1.89887
Abstract
Transient capacitance measurements have been performed on Schottky barriers on n‐GaAs containing the deep electron trap associated with oxygen, as a function of hydrostatic pressure. It is found that the oxygen level separates from the conduction band at a linear rate of 3.8±0.3 meV/kbar. From a comparison with published optical data we conclude that most of this variation comes from a pressure‐dependent Frank‐Condon shift and that the unoccupied level separates very little from the valence band.Keywords
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