Temperature dependence of the optical absorption below the band edge in thin films of a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 543-546
- https://doi.org/10.1016/0022-3093(85)90718-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Direct Measurement of the Bulk Density of Gap States in-Type Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Recombination in: Defect luminescencePhysical Review B, 1980
- Method and spectrometer for measuring optical absorption in thin epitaxial layersJournal of Physics E: Scientific Instruments, 1976