Silicon junction field effect transistors at 4.2 K
- 1 June 1988
- journal article
- Published by Elsevier in Cryogenics
- Vol. 28 (6) , 394-397
- https://doi.org/10.1016/0011-2275(88)90038-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- MOSFET behavior and circuit considerations for analog applications at 77 KIEEE Transactions on Electron Devices, 1987
- Cryogenic GaAs FET amplifiers and their use in NMR detectionReview of Scientific Instruments, 1986
- Tin, a candidate for low temperature NMR thermometer?Cryogenics, 1980
- Semiconductor devices suitable for use in cryogenic environmentsCryogenics, 1974
- Junction Field Effect Transistors at 4.2 KReview of Scientific Instruments, 1970